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METAL GATE RF SILICON FET

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TetraFET
D1031UK
METAL GATE RF SILICON FET
MECHANICAL DATA
Dimensions in mm.
GOLD METALLISED
MULTI-PURPOSE SILICON
2 PL.
0.47
1.65
2 PL.
4
3.00
2 PL.
2.07
2 PL.
0.381
3
2
0.47
2 PL.
1
0.10
TYP.
5.50 ± 0.15
1.27 ± 0.05
2 PL.
0.80
4 PL.
4.90 ± 0.15
0.3 R.
4 PL.
5
1.27
6
1.27
7
1.27
8
0.10 R.
TYP.
6.50 ±
0.15
0.10
TYP.
2.313
± 0.2
0.360
± 0.005
DMOS RF FET
10W – 28V – 1GHz
SINGLE ENDED
FEATURES
0.508 • SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
F-0127 PACKAGE
PIN 1 – SOURCE
PIN 2 – DRAIN
PIN 3 – DRAIN
PIN 4 – SOURCE
PIN 5 – SOURCE
PIN 6 – GATE
PIN 7 – GATE
PIN 8 – SOURCE
• VERY LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM
Ceramic Material: Alumina.
Parts can also be supplied with AlN or BeO for
improved thermal resistance.
Contact Semelab for details.
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
30W
BVDSS
Drain – Source Breakdown Voltage
70V
BVGSS
Gate – Source Breakdown Voltage
±20V
ID(sat)
Drain Current
5A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk
Prelim. 2/99
Seme LAB
Seme LAB



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