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2SD103

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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
2SD103
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min)
·High Power Dissipation-
: PC= 25W(Max)@TC=25
Complement to Type 2SB503
APPLICATIONS
·Designed for audio power amplifier, power switching, DC-DC
converter and regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
80
www.DataSheet.net/
V
50 V
VEBO
Emitter-Base Voltage
10 V
IC Collector Current-Continuous
3A
IE Emitter Current-Continuous
-3 A
IBB Base Current-Continuous
Collector Power Dissipation
PC @TC=25
TJ Junction Temperature
Tstg Storage Temperature
1A
25 W
150
-65~150
isc Websitewww.iscsemi.cn
Datasheet pdf - http://www.DataSheet4U.co.kr/
Inchange Semiconductor
Inchange Semiconductor



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