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D1016UK Datasheet

METAL GATE RF SILICON FET

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TetraFET
D1016UK
MECHANICAL DATA
AD
B
H
23
1
54
F
C
G
E
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
40W – 28V – 500MHz
PUSH–PULL
I
DQ
PIN 1
PIN 3
PIN 5
NM
O
SOURCE (COMMON) PIN 2
DRAIN 2
PIN 4
GATE 1
JK
DRAIN 1
GATE 2
DIM mm
A 16.38
B 1.52
C 45°
D 6.35
E 3.30
F 14.22
G 1.27 x 45°
H 1.52
I 6.35
J 0.13
K 2.16
M 1.52
N 5.08
O 18.90
Tol.
0.26
0.13
5°
0.13
0.13
0.13
0.13
0.13
0.13
0.02
0.13
0.13
MAX
0.13
Inches
0.645
0.060
45°
0.250
0.130
0.560
0.05 x 45°
0.060
0.250
0.005
0.085
0.060
0.200
0.744
Tol.
0.010
0.005
5°
0.005
0.005
0.005
0.005
0.005
0.005
0.001
0.005
0.005
MAX
0.005
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW Crss
• USEFUL PO AT 1GHz
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
100W
BVDSS
Drain – Source Breakdown Voltage *
70V
BVGSS
Gate – Source Breakdown Voltage *
±20V
ID(sat)
Drain Current *
5A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
* Per Side
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim.12/00
Seme LAB
Seme LAB



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