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METAL GATE RF SILICON FET

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TetraFET
D1012UK
MECHANICAL DATA
C
AD
B
(4 pls)
2
1
3
54
I
F
G
(t yp )
E
PIN 1
PIN 3
PIN 5
NM
H
DH
SOURCE (COMMON)
DRAIN 2
GATE 1
JK
PIN 2
PIN 4
DRAIN 1
GATE 2
DIM mm
A 13.97
B 5.72
C 45°
D 9.78
E 1.65R
F 23.75
G 1.52R
H 30.48
I 19.17
J 0.13
K 2.54
M 1.52
N 5.08
Tol. Inches Tol.
0.26 0.550 0.010
0.13 0.225 0.005
5° 45° 5°
0.13 0.385 0.005
0.13 0.065R 0.005
0.13 0.935 0.005
0.13 0.060R 0.005
0.13 1.200 0.005
0.26 0.755 0.010
0.02 0.005 0.001
0.13 0.100 0.005
0.13 0.060 0.005
0.50 0.200 0.020
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
100W – 28V – 500MHz
PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 500 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
290W
BVDSS
Drain – Source Breakdown Voltage *
70V
BVGSS
Gate – Source Breakdown Voltage *
±20V
ID(sat)
Drain Current *
15A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
* Per Side
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 11/99
Seme LAB
Seme LAB



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