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D1010ADT Datasheet

Trench MOS Barrier Schottky Rectifier

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NIKO-SEM
Trench MOS Barrier Schottky Rectifier
D1010ADT
TO-252
Halogen-Free & Lead-Free
PRODUCT SUMMARY
IF(AV)
10A
VRRM
100V
IFSM 120A
VF(typ)
0.63V
Tj(max.)
150°C
ABSOLUTE MAXIMUM RATINGS
PARAMETERS/TEST CONDITIONS
Maximum Repetitive Reverse Voltage
Average Rectifier Forward Current
Total Device (Rated VR)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Operating Junction and Storage Temperature Range
SYMBOL
VRRM
IF(av)
IFSM
Tj ,TSTG
A : Anode
K : Cathode
LIMITS
100
10
120
-55 to +150
UNITS
V
A
°C
THERMAL RESISTANCE RATING
THERMAL RESISTANCE
Typical Thermal Resistance
SYMBOL
RJC
LIMITS
2.5
UNITS
/W
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
Breakdown voltage
IR = 1 mA , TA = 25 oC
Instantaneous Forward Voltage
IF = 5 A , TA = 25 oC
IF = 5 A , TA = 125 oC
IF = 10 A , TA = 25 oC
IF = 10 A , TA = 125 oC
Instantaneous Reverse Current(1)
VR = 100V , TA = 25 oC
VR = 100V , TA = 125 oC
VBR
VF
IR
(1)Short duration pulse test used to minimize self-heating effect.
TYP
100(min)
0.53
0.5
0.67
0.63
6
MAX
0.59
0.56
0.75
0.7
800
50
UNIT
V
V
uA
mA
REV 1.0
1
F-47-5
NIKO-SEM
NIKO-SEM



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