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D1002UK Datasheet

METAL GATE RF SILICON FET

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D1002UK pdf
MECHANICAL DATA
A
B
C
1
4
M
2
3
F
D
E
G
HK
PIN 1
PIN 3
SOURCE
SOURCE
DA
PIN 2
PIN 4
IJ
DRAIN
GATE
DIM mm
A 24.76
B 18.42
C 45°
D 6.35
E 3.17
F 5.71
G 9.52
H 6.60
I 0.13
J 4.32
K 2.54
M 20.32
Tol.
0.13
0.13
0.13
0.13
0.13
0.13
REF
0.02
0.13
0.13
0.25
Inches
0.975
0.725
45°
0.25
0.125 DIA
0.225
0.375
0.260
0.005
0.170
0.100
0.800
Tol.
0.005
0.005
0.005
0.005
0.005
0.005
REF
0.001
0.005
0.005
0.010
TetraFET
D1002UK
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
40W – 28V – 175MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 16 dB MINIMUM
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 175 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
87W
BVDSS
Drain – Source Breakdown Voltage
70V
BVGSS
Gate – Source Breakdown Voltage
±20V
ID(sat)
Drain Current
10A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
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