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CS4145A8H Datasheet

Silicon N-Channel Power MOSFET

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Huajing Discrete Devices
Silicon N-Channel Power MOSFET
R
CS4145 A8H
General Description
CS4145 A8H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar
Technology which reduce the conduction loss, improve
VDSS
ID
PD(TC=25)
RDS(ON)Typ
60
84
200
8.5
switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for
system miniaturization and higher efficiency. The package form
is TO-220AB, which accords with the RoHS standard.
Features
l TrenchFET Power MOSFET
l Low ON Resistance(Rdson10m)
l Low Gate Charge (Typical Data:82nC)
l Low Reverse transfer capacitances(Typical:260pF)
l 100% Single Pulse avalanche energy Test
Applications
UPS,DC Motor Control and Class D Amplifier.
AbsoluteTc= 25unless otherwise specified):
Symbol Parameter
Rating
VDSS
ID
I
D
a1
M
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJTstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature
Range
MaximumTemperature for Soldering
60
84
60
336
±20
400
40
3
5
200
1.33
17555 to 175
300
V
A
W
m
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/
W UXI CH I NA RE SO U RC E S H UA JI NG M IC RO E L EC T RO N IC S CO . , LT D. Pa g e 1 of 10 2011
Huajing Microelectronics
Huajing Microelectronics



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