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BUL6823 Datasheet

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BUL6823 pdf
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
NPN BUL 系列晶体管/ BUL SERIES TRANSISTORS
BUL6823
●特点: 耐压高 开关速度快 安全工作区宽 符合 RoHS 规范
■ ■ ■FEATURESHIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING WIDE SOA
●应用: 节能灯 电子镇流器
■ ■APPLICATION: FLUORESCENT LAMP
ELECTRONIC BALLAST
RoHS COMPLIANT
●最大额定值(Tc=25°C
Absolute Maximum RatingsTc=25°CTO-92/TO-92S
参数
符号
额定值
单位
PARAMETER
SYMBOL VALUE UNIT
集电极-基极电压
Collector-Base Voltage
VCBO
600
V
集电极-发射极电压
Collector-Emitter Voltage
VCEO
400
V
集电极-发射极电压
Emitter- Base Voltage
VEBO
9
V
集电极电流
Collector Current
IC 1.2 A
集电极耗散功率
Total Power Dissipation
Ptot
13 W
最高工作温度
Junction Temperature
Tj
150 °C
贮存温度
Storage Temperature
Tstg -65-150 °C
●电特性(Tc=25°C
Electronic CharacteristicsTc=25°C
参数名称
CHARACTERISTICS
集电极-基极截止电流
Collector-Base Cutoff Current
集电极-发射极截止电流
Collector-Emitter Cutoff Current
集电极-基极电压
Collector-Base Voltage
集电极-发射极电压
Collector-Emitter Voltage
发射极 -基极电压
Emitter- Base Voltage
符号
SYMBOL
ICBO
ICEO
VCBO
VCEO
VEBO
测试条件
TEST CONDITION
VCB=600V
VCE=400V,IB=0
IC=1mA,IE=0
IC=10mA,IB=0
IE=1mA,IC=0
最小值
MIN
600
400
9
最大值
MAX
100
250
单位
UNIT
μA
μA
V
V
V
集电极-发射极饱和电压
Collector-Emitter Saturation Voltage
发射极-基极饱和电压
Base-Emitter Saturation Voltage
Vcesat
Vbesat
IC=0.5A,IB=0.1A
IC=1.0A,IB=0.5A
IC=0.5A,IB=0.1A
0.5
V
0.6
1.2 V
电流放大倍数
DC Current Gain
hFE
贮存时间 Storage Time
tS
贮存时间 Falling Time
tf
●订单信息/ORDERING INFORMATION:
VCE=5V,IC=1mA
VCE=10V,IC=0.1A
VCE=5V,IC=1A
VCC=5V,IC=0.25A,
(UI9600)
7
10
5
1.5
40
2.5
1.0
µs
包装形式/PACKING
订货编码/ORDERING CODE
普通塑封料/ Nornal Package Material 无卤塑封料/Halogen Free
TO-92 普通袋装/NORMAL PACKING
BUL6823 TO-92
BUL6823 TO-92-HF
TO-92S 普通袋装/NORMAL PACKING
BUL6823 TO-92S
BUL6823 TO-92S-HF
TO-92 盒式编带/AMMOPACK
BUL6823 TO-92-AP
BUL6823 TO-92-AP-HF
Si semiconductors 2013.1
1
SI Semiconductors
SI Semiconductors



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