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BUL6821 Datasheet

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BUL6821 pdf
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
NPN BUL 系列晶体管/ BUL SERIES TRANSISTORS
BUL6821
●特点: 耐压高 开关速度快 安全工作区宽 符合 RoHS 规范
■ ■ ■FEATURESHIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING WIDE SOA
●应用: 节能灯 电子镇流器
■ ■APPLICATION: FLUORESCENT LAMP
ELECTRONIC BALLAST
RoHS COMPLIANT
●最大额定值(Tc=25°C
Absolute Maximum RatingsTc=25°CTO-92/TO-92S
参数
符号
额定值
单位
PARAMETER
集电极-基极电压
Collector-Base Voltage
集电极-发射极电压
Collector-Emitter Voltage
SYMBOL
VCBO
VCEO
VALUE
600
400
UNIT
V
V
发射极-基极电压
Emitter- Base Voltage
VEBO
9
V
集电极电流
Collector Current
IC 0.4 A
集电极耗散功率
Total Power Dissipation
最高工作温度
Junction Temperature
贮存温度
Storage Temperature
Ptot 8
Tj 150
Tstg -65-150
W
°C
°C
●电特性(Tc=25°C
Electronic CharacteristicsTc=25°C
参数名称
符号
测试条件
CHARACTERISTICS
集电极-基极截止电流
Collector-Base Cutoff Current
集电极-发射极截止电流
Collector-Emitter Cutoff Current
集电极-基极电压
Collector-Base Voltage
集电极-发射极电压
Collector-Emitter Voltage
发射极 -基极电压
Emitter- Base Voltage
SYMBOL
ICBO
TEST CONDITION
VCB=600V
ICEO VCE=400V,IB=0
VCBO
IC=1mA,IE=0
VCEO
IC=10mA,IB=0
VEBO
IE=1mA,IC=0
最小值
MIN
600
400
9
最大值
MAX
100
250
单位
UNIT
μA
μA
V
V
V
集电极-发射极饱和电压
Collector-Emitter Saturation Voltage
发射极-基极饱和电压
Base-Emitter Saturation Voltage
Vcesat
Vbesat
电流放大倍数
DC Current Gain
hFE
IC=0.1A,IB=10mA
IC=0.4A,IB=0.1A
IC=0.1A,IB=10mA
VCE=5V,IC=1mA
VCE=10V,IC=50mA
Vce=5V,Ic=0.4A
7
10
5
0.5
0.7
1.0
40
V
V
贮存时间/Storage Time
ts
下降时间/Falling Time
tf
●订单信息/ORDERING INFORMATION:
VCC=5V,IC=0.1A,
(UI9600)
1.0
3.0
0.9
µs
包装形式/PACKING
TO-92 普通袋装/NORMAL PACKING
订货编码/ORDERING CODE
普通塑封料/ Nornal Package Material 无卤塑封料/Halogen Free
BUL6821 TO-92
BUL6821 TO-92-HF
TO-92S 普通袋装/NORMAL PACKING
BUL6821 TO-92S
BUL6821 TO-92S-HF
TO-92 盒式编带/AMMOPACK
BUL6821 TO-92-AP
BUL6821 TO-92-AP-HF
1
Si semiconductors 2013.1
SI Semiconductors
SI Semiconductors



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