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BLDB128D Datasheet

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BLDB128D pdf
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
NPN D 系列晶体管/ D SERIES TRANSISTORS
BLDB128D
●特点: 耐压高 开关速度快 安全工作区宽 符合 RoHS 规范
■ ■ ■ ■FEATURESHIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING WIDE SOA RoHS COMPLIANT
●应用: 节能灯 电子镇流器 电子变压器 开关电源
■ ■APPLICATION: FLUORESCENT LAMP
ELECTRONIC BALLAST
ELECTRONIC TRANSFORMER
SWITCH MODE POWER SUPPLY
●最大额定值(Tc=25°C
Absolute Maximum RatingsTc=25°C
TO-262/263
参数
符号
额定值
单位
PARAMETER
集电极-基极电压
Collector-Base Voltage
SYMBOL
VCBO
VALUE
700
UNIT
V
集电极-发射极电压
Collector-Emitter Voltage
VCEO
400
V
发射极-基极电压
Emitter- Base Voltage
VEBO
9
V
集电极电压
Collector Current
IC 5.0 A
集电极耗散功率
Total Power Dissipation
Ptot 75 W
最高工作温度
Junction Temperature
Tj 150 °C
贮存温度
Storage Temperature
Tstg -65-150
°C
●电特性(Tc=25°C
Electronic CharacteristicsTc=25°C
参数名称
符号
测试条件
最小值 最大值
单位
CHARACTERISTICS
SYMBOL
TEST CONDITION
MIN
MAX
UNIT
集电极-基极截止电流
Collector-Base Cutoff Current
ICBO
VCB=700V
集电极-发射极截止电流
Collector-Emitter Cutoff Current
ICEO
VCE=400V,IB=0
100 μA
250 μA
集电极-基极电压
Collector-Base Voltage
VCBO
IC=1mA,IE=0
700
V
集电极-发射极电压
Collector-Emitter Voltage
发射极-基极电压
Emitter -Base Voltage
VCEO
VEBO
IC=10mA,IB=0
IE=1mA,IC=0
400
9
V
V
集电极-发射极饱和电压
Collector-Emitter Saturation Voltae
发射极-基极饱和电压
Base-Emitter Saturation Voltage
Vcesat
Vbesat
IC=1.0A,IB=0.2A
IC=4.0A,IB=1.0A
IC=1.0A,IB=0.2A
0.3
V
0.8
1.1 V
电流放大倍数
DC Current Gain
hFE
贮存时间 Storage Time
tS
下降时间 Falling Time
tf
内置二极管正向压降
Diode Forward Voltage
VF
● 订单信息/ORDERING INFORMATION:
VCE=5V,IC=10mA
VCE=5V,IC=1.0A
VCE=5V,IC=4.0A
VCC=5V,IC=0.5A
(UI9600)
IF=2.0A
7
10 40
5
2.0 4.0
0.8
1.5
µs
V
包装形式/PACKING
订货编码/ORDERING CODE
普通塑封料/ Normal Package Material
无卤塑封料/Halogen Free
TO-262 普通袋装/NORMAL PACKING
TO-262 263 条管装/TUBE PACKING
TO-263 编带装/TAPE & REEL PACKING
BLDB128D TO-262
BLDB128D TO-262-TU
BLDB128D TO-263-TU
BLDB128D TO-263-TR
BLDB128D TO-262-HF
BLDB128D TO-262-TU-HF
BLDB128D TO-263-TU-HF
BLDB128D TO-263-TR-HF
Si semiconductors 2013.1
1
SI Semiconductors
SI Semiconductors



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