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BLD132D Datasheet

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BLD132D pdf
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
NPN D 系列晶体管/ D SERIES TRANSISTORS
BLD132D
●特点: 耐压高 开关速度快 安全工作区宽 符合 RoHS 规范
■ ■ ■FEATURESHIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING WIDE SOA
●应用: 电子镇流器 节能灯
■ ■APPLICATIONS: ELECTRONIC BALLAST FLUORESCENT LAMP
●最大额定值(Tc=25°C
Absolute Maximum RatingsTc=25°CTO-92/92S/SOT-89
参数
PARAMETER
符号
单位
SYMBO 额定值 VALUE UNIT
集电极-基极电压
CollePcAtoRr-ABMasEeTEVoRltage
L
VCBO
600
V
集电极-发射极电压
Collector-Emitter Voltage
VCEO
400
V
发射极-基极电压
Emitter-Base Voltage
VEBO
9
V
集电极电流
Collector Current
IC
2A
RoHS COMPLIANT
集电极耗散功率
Total Power Dissipation
SOT-89:15
Ptot
TO-92/92S:15
最高工作温度
Junction Temperature
Tj
150
贮存时间
Storage Temperature
Tstg
-65-150
●电特性(Tc=25°C
Electrical CharacteristicsTc=25°C
参数名称
符号
CHARACTERISTICS
SYMBOL
集电极-基极截止电流
Collector-Base Cutoff Current
ICBO
集电极-发射极截止电流
Collector-Emitter Cutoff Current
ICEO
集电极-基极电压
Collector-Base Voltage
VCBO
集电极-发射极电压
Collector-Emitter Voltage
VCEO
发射极-基极电压
Emitter-Base Voltage
VEBO
W
°C
°C SOT-89
测试条件
TEST CONDITION
VCB=600V
VCE=400V,IB=0
IC=1mA,IE=0
IC=10mA,IB=0
IE=1mA,IC=0
最小值
MIN
600
400
9
最大值
MAX
100
250
单位
UNIT
μA
μA
V
V
V
集电极-发射极饱和电压
Collector-Emitter Saturation Voltage
发射极-基极饱和电压
Base-Emitter Saturation Voltage
Vcesat
Vbesat
IC=200mA,IB=20mA
IC=0.5A,IB=0.1A
IC=1.5A,IB=0.5A
Ic=0.5A,Ib=0.1A
0.3
0.4 V
0.9
1.2 V
电流放大倍数
DC Current Gain
VCE=5V,IC=1mA
7
hFE
VCE=5V,IC=0.2A
10
40
VCE=5V,IC=2.0A
5
贮存时间/Storage Time
下降时间 / Falling Time
内置二极管正向压降
Diode Forward Voltage
tS
tf
VCC=5V,IC=0.25A
(UI9600)
1.5
3.0
0.8
µs
VF IF=0.8A
2.0 V
●订单信息/ORDERING INFORMATION:
包装形式/PACKING
TO-92 普通袋装/NORMAL PACKING
订货编码/ORDERING CODE
普通塑封料/ Nornal Package Material 无卤塑封料/Halogen Free
BLD132D TO-92
BLD132D TO-92-HF
TO-92S 普通袋装/NORMAL PACKING
BLD132D TO-92S
BLD132D TO-92S-HF
TO-92 盒式编带/AMMOPACK
BLD132D TO-92-AP
BLD132D TO-92-AP-HF
SOT-89 普通袋装/NORMAL PACKING
BLD132D SOT-89
BLD132D SOT-89-HF
Si semiconductors 2013.12
1
SI Semiconductors
SI Semiconductors



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