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BLD128DA Datasheet

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BLD128DA pdf
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
NPN D 系列晶体管/ D SERIES TRANSISTORS
BLD128DA
●特点: 耐压高 开关速度快 安全工作区宽 符合 RoHS 规范
■ ■ ■ ■FEATURESHIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING WIDE SOA RoHS COMPLIANT
●应用: 节能灯 电子镇流器 电子变压器 开关电源
■ ■ ■APPLICATION: FLUORESCENT LAMP ELECTRONIC BALLAST
ELECTRONIC TRANSFORMER
SWITCH MODE POWER SUPPLY
●最大额定值(Tc=25°C
Absolute Maximum RatingsTc=25°CSOT-82/ SOT-82S
参数
PARAMETER
集电极-基极电压
Collector-Base Voltage
集电极-发射极电压
Collector-Emitter Voltage
发射极-基极电压
Emitter- Base Voltage
集电极电流
Collector Current
集电极耗散功率
Total Power Dissipation
最高工作温度
Junction Temperature
贮存温度
Storage Temperature
符号
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
额定值
VALUE
600
400
9
3.5
55
150
-65-150
单位
UNIT
V
V
V
A
W
°C
°C
●电特性(Tc=25°C
Electronic CharacteristicsTc=25°C
参数名称
符号
CHARACTERISTICS
集电极-基极截止电流
Collector-Base Cutoff Current
SYMBOL
ICBO
集电极-发射极截止电流
Collector-Emitter Cutoff Current
ICEO
集电极-基极电压
Collector-Base Voltage
VCBO
集电极-发射极电压
Collector-Emitter Voltage
VCEO
发射极-基极电压
Emitter- Base Voltage
VEBO
测试条件
TEST CONDITION
VCB=600V
VCE=400V,IB=0
IC=1mA,IE=0
IC=10mA,IB=0
IE=1mA,IC=0
最小值
MIN
600
400
9
最大值
MAX
100
250
单位
UNIT
μA
μA
V
V
V
集电极-发射极饱和电压
Collector-Emitter Saturation Voltage
发射极-基极饱和电压
Base-Emitter Saturation Voltage
Vcesat
Vbesat
IC=1.0A,IB=0.2A
IC=2A,IB=0.5A
IC=1.0A,IB=0.2A
0.5
V
1.0
1.3 V
电流放大倍数
DC Current Gain
VCE=5V,IC=10mA
7
hFE VCE=5V,IC=1.0A 10 40
Vce=5V,Ic=3.5A
5
贮存时间/Storage Time
tS
下降时间/Falling Time
内置二极管正向压降
Diode Forward Voltage
tf
VF
●订单信息/ORDERING INFORMATION:
VCC=5V,IC=0.5A,
(UI9600)
IF=2A
2.0 4.0
µs
0.8
1.7 V
包装形式/PACKING
订货编码/ORDERING CODE
普通塑封料/ Normal Package Material 无卤塑封料/Halogen Free
SOT-82 普通袋装/NORMAL PACKING
BLD128DA SOT-82
BLD128DA SOT-82-HF
SOT-82S 普通袋装/NORMAL PACKING
BLD128DA SOT-82S
BLD128DA SOT-82S-HF
Si semiconductors 2013.1
1
SI Semiconductors
SI Semiconductors



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