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BLD112D Datasheet

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深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
NPN D 系列晶体管/D SERIES TRANSISTORS
BLD112D
特点: 耐压高 开关速度快 安全工作区宽 符合 RoHS 规范
■ ■ ■ ■FEATURESHIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING WIDE SOA RoHS COMPLIANT
应用: 节能灯 电子镇流器
■ ■APPLICATION: FLUORESCENT LAMP
ELECTRONIC BALLAST
最大额定值(Tc=25°C
Absolute Maximum RatingsTc=25°CTO-92/92S/126/126S
参数
符号
额定值
单位
PARAMETER
集电极-基极电压
Collector-Base Voltage
SYMBOL
VCBO
VALUE
600
UNIT
V
集电极-发射极电压
Collector-Emitter Voltage
VCEO
400
V
发射极-基极电压
Emitter- Base Voltage
VEBO
9
V
集电极电流
Collector Current
IC
1.0 A
集电极耗散功率
Total Power Dissipation
TO-92/92S: 12
Ptot TO-126/126S: 20 W
最高工作温度
Junction Temperature
Tj
150 °C
贮存温度
Storage Temperature
Tstg
-65-150
电特性(Tc=25°C
Electronic CharacteristicsTc=25°C
参数名称
符号
°C
测试条件
最小值 最大值
单位
CHARACTERISTICS
集电极-基极截止电流
Collector-Base Cutoff Current
集电极-发射极截止电流
Collector-Emitter Cutoff Current
集电极-基极电压
Collector-Base Voltage
集电极-发射极电压
Collector-Emitter Voltage
发射极 -基极电压
Emitter- Base Voltage
SYMBOL
ICBO
ICEO
VCBO
VCEO
VEBO
TEST CONDITION
VCB=600V
VCE=400V,IB=0
IC=1mA,IE=0
IC=10mA,IB=0
IE=1mA,IC=0
MIN
MAX
UNIT
100 μA
250 μA
600 V
400 V
9V
集电极-发射极饱和电压
Collector-Emitter Saturation Voltage
发射极-基极饱和电压
Base-Emitter Saturation Voltage
Vcesat
Vbesat
IC=200mA,IB=40mA
IC=750mA,IB=250mA
IC=200mA,IB=40mA
0.2
V
0.5
1.2 V
电流放大倍数
DC Current Gain
hFE
贮存时间/Storage Time
tS
下降时间/Falling Time
tf
内置二极管正向压降
Diode Forward Voltage
VF
●订单信息/ORDERING INFORMATION:
VCE=5V,IC=1mA
VCE=5V,IC=0.1A
VCE=5V,IC=1A
VCC=5V,IC=0.25A,
(UI9600)
IF=0.6A
7
10 40
5
1.0 3.0
µs
1.0
2.0 V
包装形式/PACKING
TO-92 普通袋装/NORMAL PACKING
TO-92S 普通袋装/NORMAL PACKING
TO-92 盒式编带/AMMOPACK
TO-126 普通袋装/NORMAL PACKING
TO-126S 普通袋装/NORMAL PACKING
订货编码/ORDERING CODE
普通塑封料/ Nornal Package Material 无卤塑封料/Halogen Free
BLD112D TO-92
BLD112D TO-92-HF
BLD112D TO-92S
BLD112D TO-92S-HF
BLD112D TO-92-AP
BLD112D TO-92-AP-HF
BLD112D TO-126
BLD112D TO-126-HF
BLD112D TO-126S
BLD112D TO-126S-HF
Si semiconductors 2013.12
1
SI Semiconductors
SI Semiconductors



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