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BLD102D Datasheet

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BLD102D pdf
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
NPN D 系列晶体管/ D SERIES TRANSISTORS
BLD102D
特点: 耐压高 开关速度快 安全工作区宽 符合 RoHS 规范
■ ■ ■ ■FEATURESHIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING WIDE SOA RoHS COMPLIANT
应用: 节能灯 电子镇流器
APPLICATION: FLUORESCENT LAMP
ELECTRONIC BALLAST
●最大额定值(Tc=25°C
Absolute Maximum RatingsTc=25°C
TO-92/92S
参数
PARAMETER
符号
SYMBOL
额定值
VALUE
单位
UNIT
集电极-基极电压
Collector-Base Voltage
VCBO
600
V
集电极-发射极电压
Collector-Emitter Voltage
VCEO
400
V
发射极-基极电压
Emitter- Base Voltage
VEBO
9
V
集电极电流
Collector Current
IC 0.8 A
集电极耗散功率
Total Power Dissipation
Ptot 10
W
最高工作温度
Junction Temperature
Tj 150 °C
贮存温度
Storage Temperature
Tstg -65-150
°C
电特性(Tc=25°C
Electronic CharacteristicsTc=25°C
参数名称
符号
测试条件
CHARACTERISTICS
SYMBOL TEST CONDITION
集电极-基极截止电流
Collector-Base Cutoff Current
集电极-发射极截止电流
Collector-Emitter Cutoff Current
ICBO
ICEO
VCB=600V
VCE=400V,IB=0
集电极-基极电压
Collector-Base Voltage
VCBO
IC=1mA,IE=0
集电极-发射极电压
Collector-Emitter Voltage
发射极 -基极电压
Emitter- Base Voltage
VCEO
VEBO
IC=10mA,IB=0
IE=1mA,IC=0
最小值
MIN
600
400
9
最大值
MAX
100
250
单位
UNIT
μA
μA
V
V
V
集电极-发射极饱和电压
Collector-Emitter Saturation Voltage
发射极-基极饱和电压
Base-Emitter Saturation Voltage
Vcesat
Vbesat
IC=100mA,IB=10mA
IC=0.5A,IB=0.1A
IC=100mA,IB=10mA
0.3
V
0.6
1.0 V
电流放大倍数
DC Current Gain
VCE=5V,IC=1mA
7
hFE VCE=5V,IC=0.1A 10 40
VCE=5V,IC=0.8A
5
贮存时间/Storage Time
下降时间/Falling Time
内置二极管正向压降
Diode Forward Voltage
tS VCC=5V,IC=0.1A, 2.0 4.0
tf (UI9600)
0.8
VF IF=0.5A
2.0
µs
V
●订单信息/ORDERING INFORMATION:
包装形式/PACKING
订货编码/ORDERING CODE
普通塑封料/ Nornal Package Material 无卤塑封料/Halogen Free
TO-92 普通袋装/NORMAL PACKING
BLD102D TO-92
BLD102D TO-92-HF
TO-92S 普通袋装/NORMAL PACKING
BLD102D TO-92S
BLD102D TO-92S-HF
TO-92 盒式编带/AMMOPACK
BLD102D TO-92-AP
BLD102D TO-92-AP-HF
Si semiconductors 2013.1
1
SI Semiconductors
SI Semiconductors



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