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BC848A Datasheet

NPN Silicon Planar Epitaxial Transistors

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NPN Silicon Planar Epitaxial Transistors
BC846
BC847
BC848
Pin configuration:
1. BASE
2. EMITTER
3. COLLECTOR
3
1
2
SOT-23 SMD Package
Unit: inch (mm)
Absolute Maximum Ratings (Ta = 25 oC unless specified otherwise)
DESCRIPTION
Collector Base Voltage
Collector Emmitter Voltage (VBE = 0V)
Collector Emitter Voltage
Emitter Base Voltage
Collector Current (DC)
Collector Current - Peak
Emitter Current - Peak
Base Current - Peak
Total power dissipation up to
Tamb = 25 oC
Storge Temperature
Junction Temperature
SYMBOL
VCBO
VCES
VCEO
VEBO
IC
ICM
-IEM
IBM
Ptot**
Tstg
Tj
BC846
80
80
65
6
Thermal Resistance
From junction to ambient
Rth(j-a)**
**Mounted on a ceramic substrate of 8mm x 10mm x 0.7mm
BC847
50
50
45
6
100
200
200
200
250
-55 to +150
150
500
BC848
30
30
30
5
UNITS
V
V
V
V
mA
mA
mA
mW
oC
oC
K/W
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