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BC847BL3 Datasheet

NPN Silicon AF Transistors

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BC847BL3 pdf
BC847...-BC850...
Transition frequency fT = ƒ(IC)
VCE = 5 V
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
10 3
MHz
fT 5
EHP00363
10 2
5
10 1
10 -1
5 10 0
5 10 1
mA 10 2
ΙC
Total power dissipation Ptot = ƒ(TS)
BC847-BC850
13
pF
11
10
9
8
7
6
5 CEB
4
3
2
1 CCB
00
4
8
12
16 V
22
VCB/VEB
Total power dissipation Ptot = ƒ(TS)
BC847BL3/BC848BL3
360
mW
300
270
240
210
180
150
120
90
60
30
00 15 30 45 60 75 90 105 120 °C 150
TS
300
mW
250
225
200
175
150
125
100
75
50
25
00 15 30 45 60 75 90 105 120 °C 150
TS
6 2011-09-09
Infineon
Infineon



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