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BC847BL3 Datasheet

NPN Silicon AF Transistors

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BC847BL3 pdf
BC847...-BC850...
DC current gain hFE = ƒ(IC)
VCE = 5 V
10 3
h FE 5 100 C
25 C
102 -50 C
5
EHP00365
Collector-emitter saturation voltage
IC = ƒ(VCEsat), hFE = 20
10 2
mA
ΙC
10 1
5
100 C
25 C
-50 C
EHP00367
10 1 100
55
10 0
10 -2
5 10 -1 5 10 0
5 101 mA 10 2
ΙC
Base-emitter saturation voltage
IC = ƒ(VBEsat), hFE = 20
10 -1
0
0.1 0.2 0.3 0.4 V 0.5
VCEsat
Collector cutoff current ICBO = ƒ(TA)
VCB = 30 V
10 2
Ι C mA
10 1
5
10 0
5
100 C
25 C
-50 C
EHP00364
10 4
nA
Ι CB0
10 3
5
10 2
5
10 1
5
EHP00415
max
typ
10 -1
0
0.2 0.4 0.6 0.8
V 1.2
V BEsat
10 0
0
50 100 ˚C 150
TA
5 2011-09-09
Infineon
Infineon



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