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BC847BL3 Datasheet

NPN Silicon AF Transistors

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BC847BL3 pdf
BC847...-BC850...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
AC Characteristics
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
fT - 250 - MHz
Ccb - 0.95 - pF
Ceb - 9 -
Short-circuit input impedance
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C
Open-circuit reverse voltage transf. ratio
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C
h11e
h12e
k
- 2.7 -
- 4.5 -
- 8.7 -
10-4
- 1.5 -
-2-
-3-
Short-circuit forward current transf. ratio
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C
h21e
- 200 -
- 330 -
- 600 -
Open-circuit output admittance
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B
IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C
h22e
µS
- 18 -
- 30 -
- 60 -
Noise figure
F - 1.2 4 dB
IC = 200 µA, VCE = 5 V, f = 1 kHz,
f = 200 Hz, RS = 2 k, BC849..., BC850...
Equivalent noise voltage
IC = 200 µA, VCE = 5 V, RS = 2 k,
f = 10 ... 50 Hz , BC850...
Vn - - 0.135 µV
4 2011-09-09
Infineon
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