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BC847BL3 Datasheet

NPN Silicon AF Transistors

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BC847BL3 pdf
BC847...-BC850...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 , BC847..., BC850...
IC = 10 mA, IB = 0 , BC848..., BC849...
V(BR)CEO
45
30
-
-
-
-
Collector-base breakdown voltage
IC = 10 µA, IE = 0 , BC847..., BC850...
IC = 10 µA, IE = 0 , BC848..., BC849...
V(BR)CBO
50
30
-
-
-
-
Emitter-base breakdown voltage
IE = 0 , IC = 10 µA
Collector-base cutoff current
VCB = 45 V, IE = 0
VCB = 30 V, IE = 0 , TA = 150 °C
DC current gain1)
IC = 10 µA, VCE = 5 V, hFE-grp.A
IC = 10 µA, VCE = 5 V, hFE-grp.B
IC = 10 µA, VCE = 5 V, hFE-grp.C
IC = 2 mA, VCE = 5 V, hFE-grp.A
IC = 2 mA, VCE = 5 V, hFE-grp.B
IC = 2 mA, VCE = 5 V, hFE-grp.C
V(BR)EBO - 6 -
ICBO
hFE
- 0.015 -
-5-
- 140 -
- 250 -
- 480 -
110 180 220
200 290 450
420 520 800
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
Base emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
Base-emitter voltage1)
IC = 2 mA, VCE = 5 V
IC = 10 mA, VCE = 5 V
VCEsat
- 90 250
- 200 600
VBEsat
- 700 -
- 900 -
VBE(ON)
580 660 700
- - 770
1Pulse test: t < 300µs; D < 2%
Unit
V
µA
-
mV
3 2011-09-09
Infineon
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