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BC847B Datasheet

NPN General Purpose Transistor

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BC847B pdf
Transistors
BC847B
NPN General Purpose Transistor
BC847B
zFeatures
1) BVCEO < 45V (IC=1mA)
2) Complements the BC857B.
zPackage, marking, and Packaging specifications
Part No.
Packaging type
Marking
Code
Basic ordering unit (pieces)
BC847B
SST3
G1F
T116
3000
zExternal dimensions (Unit : mm)
2.9±0.2
1.9±0.2
0.95 0.95
0.95
+0.2
0.1
0.45±0.1
(1) (2)
(3)
0~0.1
0.2Min.
0.4
+0.1
0.05
0.15
+0.1
0.06
All terminals have the same dimensions
ROHM : SST3
(1) Emitter
(2) Base
(3) Collector
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
Tstg
When mounted on a 7×5×0.6mm ceramic board.
Limits
50
45
6
0.1
0.2
0.35
150
65 to +150
Unit
V
V
V
A
W
°C
°C
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Symbol
BVCBO
BVCEO
BVEBO
Collector cutoff current
ICBO
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Collector output capacitance
Emitter input capacitance
VCE(sat)
VBE(on)
hFE
fT
Cob
Cib
Min.
50
45
6
0.58
200
Typ.
200
3
8
Max.
15
5
0.25
0.6
0.77
450
Unit
V
V
V
nA
µA
V
V
MHz
pF
pF
Conditions
IC=50µA
IC=1mA
IE=50µA
VCB=30V
VCB=30V, Ta=150°C
IC/IB=10mA/0.5mA
IC/IB=100mA/5mA
VCE/IC=5V/10mA
VCE=5V, IE=−20mA, f=100MHz
VCB=10V, IE=0, f=1MHz
VEB=0.5V, IC=0, f=1MHz
Rev.A
1/5
Rohm
Rohm



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