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BC817-40 Datasheet

EPITAXIAL PLANAR NPN TRANSISTOR

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BC817-40 pdf
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Complementary to BC807.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
VCBO
VCEO
50
45
Emitter-Base Voltage
VEBO
5
Collector Current
IC 800
Emitter Current
IE -800
Collector Power Dissipation
PC* 350
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
* : Package Mounted On 99.9% Alumina 10 8 0.6mm.
UNIT
V
V
V
mA
mA
mW
BC817
EPITAXIAL PLANAR NPN TRANSISTOR
E
L BL
DIM MILLIMETERS
A 2.93+_ 0.20
B 1.30+0.20/-0.15
23
C 1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10
Q
PP
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
P7
Q 0.1 MAX
M
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain (Note)
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE
fT
VCB=20V, IE=0
VEB=5V, IC=0
VCE=1V, IC=100mA
VCE=1V, IC=500mA
IC=500mA, IB=50mA
VCE=1V, IC=500mA
VCE=5V, IC=10mA, f=100MHz
Collector Output Capacitance
Cob VCB=10V, IE=0, f=1MHz
Note : hFE(1) Classification 16:100 250 , 25:160 400 , 40:250 630
MARK SPEC
TYPE
MARK
BC817-16
6A
BC817-25
6B
BC817-40
6C
Marking
Type Name
MIN.
-
-
100
40
-
-
100
-
TYP.
-
-
-
-
-
-
-
5
MAX.
0.1
0.1
630
-
0.7
1.2
-
-
UNIT
A
A
V
V
MHz
pF
Lot No.
2009. 2. 19
Revision No : 5
1/2
KEC
KEC



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