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BC817-40-G Datasheet

General Purpose Transistors

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BC817-40-G pdf
General Purpose Transistors
BC817-16-G/25-G/40-G (NPN)
RoHS Device
Features
- For general AF applications.
- High collector current.
- High current gain.
- Low collector-emitter saturation voltage.
Marking:
BC817-16-G: 6A
BC817-25-G: 6B
BC817-40-G: 6C
Diagram:
Collector
3
1
Base
2
Emitter
SOT-23
0.056(1.40)
0.047(1.20)
0.119(3.00)
0.110(2.80)
3
12
0.079(2.00)
0.071(1.80)
0.045(1.15)
0.035(0.90)
0.006(0.15)
0.003(0.08)
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
0.004(0.10) max
0.020(0.50)
0.012(0.30)
Dimensions in inches and (millimeter)
Maximum Ratings (at TA=25°C unless otherwise noted)
Parameter
Symbol
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
VCBO
VCEO
VEBO
Collector current-continuous
Collector power dissipation
Junction and storage temperature range
IC
PC
TJ, TSTG
Value
50
45
5
500
300
-55 to +150
Unit
V
V
V
mA
mW
°C
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR28
Comchip Technology CO., LTD.
REV:B
Page 1
Comchip
Comchip



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