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BC817-25 Datasheet

SILICON NPN TRANSISTORS

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BC817 SERIES
BC818 SERIES
SURFACE MOUNT SILICON
NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BC817 and BC818
series devices are silicon NPN transistors, epoxy
molded in a surface mount package, designed for
general purpose switching and amplifier applications.
MARKING CODE: SEE MARKING CODE TABLE ON
FOLLOWING PAGE
SOT-23 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Peak Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
PD
TJ, Tstg
ΘJA
BC817
50
BC818
30
45 25
5.0
500
1.0
200
350
-65 to +150
357
UNITS
V
V
V
mA
A
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN TYP
ICBO
VCB=20V
ICBO
VCB=20V, TJ=150°C
IEBO
VEB=5.0V
BVCES
IC=10μA (BC817)
50
BVCES
IC=10μA (BC818)
30
BVCEO
IC=10mA (BC817)
45
BVCEO
IC=10mA (BC818)
25
BVEBO
IE=1.0μA
5.0
VCE(SAT) IC=500mA, IB=50mA
VBE(ON)
VCE=1.0V, IC=500mA
fT
VCE=5.0V, IC=10mA, f=100MHz
100
Cob VCB=10V, IE=0, f=1.0MHz
10
MAX
100
5.0
100
0.7
1.2
UNITS
nA
μA
nA
V
V
V
V
V
V
V
MHz
pF
BC817
BC817-16
BC817-25
BC817-40
BC818
BC818-16
BC818-25
BC818-40
MIN MAX MIN MAX MIN MAX MIN MAX
hFE
VCE=1.0V, IC=100mA
100 600 100 250 160 400 250 600
hFE
VCE=1.0V, IC=500mA 40 - 40 -
40 -
40 -
R1 (11-November 2013)
Central Semiconductor
Central Semiconductor



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