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BC817-25 Datasheet

NPN Silicon AF Transistors

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BC817-25 pdf
NPN Silicon AF Transistors
 For general AF applications
 High collector current
 High current gain
 Low collector-emitter saturation voltage
 Complementary types: BC807, BC808 (PNP)
BC817, BC818
3
2
1 VPS05161
Type
BC817-16
BC817-25
BC817-40
BC818-16
BC818-25
BC818-40
Marking
6As
6Bs
6Cs
6Es
6Fs
6Gs
1=B
1=B
1=B
1=B
1=B
1=B
Pin Configuration
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
Package
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS = 79 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point1)
Symbol
VCEO
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
RthJS
BC817
BC818
45 25
50 30
55
500
1
100
200
330
150
-65 ... 150
215
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
mA
A
mA
mW
°C
K/W
1 Nov-29-2001
Infineon Technologies AG
Infineon Technologies AG



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