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BC817-16 Datasheet

NPN Small Signal Transistor

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BC817-16 pdf
Small Signal Product
300mW, NPN Small Signal Transistor
BC817-16/-25/-40
Taiwan Semiconductor
FEATURES
- Low power loss, high current capability, low VF
- Surface mount device type
- Moisture sensitivity level 1
- Matte Tin(Sn) lead finish with Nickel(Ni) underplate
- Pb free and RoHS complian
- Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
MECHANICAL DATA
- Case: SOT- 23 small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Weight: 0.008gram (approximately)
SOT-23
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power dissipation
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Thermal Resistance (Junction to Ambient)
Junction Temperature
Storage Temperature Range
Notes: 1. Valid provided that electrodes are kept at ambient temperature
PD
VCBO
VCEO
VEBO
IC
RθJA
TJ
TSTG
300
50
45
5
500
417
150
-55 to + 150
UNIT
mW
V
V
V
mA
°C
°C
°C
PARAMETER
SYMBOL BC817-16
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Junction Capacitance
DC Current Gain
DC Current Gain
Min. DC Current Gain
VCE= 5V
IC= 10µA IE= 0
IC= 10mA IB= 0
IE= 1µA IC= 0
VCB= 45V IE= 0
VEB= 4V IC= 0
IC= 500mA IB= 50 mA
IC= 500mA IB= 50 mA
IC= 10mA f= 100MHz
VCB=10V f= 1.0MHz
VCE= 1V IC= 100mA
VCE= 1V IC= 100mA
Vce=1V Ic=500mA
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(sat)
VBE(sat)
fT
CCBO
hFE
hFE
hFE
100
>40
100-250
BC817-25
50
45
5
0.1
0.1
0.7
1.2
100
10
400
160
160-400
40
BC817-40
600
250
250-600
UNIT
V
V
V
µA
µA
V
V
MHz
pF
Document Number: DS_S1404005
Version: G14
Taiwan Semiconductor
Taiwan Semiconductor



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