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BC808-40W Datasheet

Surface mount Si-Epitaxial PlanarTransistors

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BC808-40W pdf
BC 807W / BC 808W
General Purpose Transistors
PNP
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
PNP
2±0.1
0.3 3
Type
Code
12
1.3
1±0.1
Dimensions / Maße in mm
1=B 2=E 3=C
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
225 mW
SOT-323
0.01 g
Maximum ratings (TA = 25/C)
Collector-Emitter-voltage
B open
Collector-Emitter-voltage
B shorted
Collector-Base-voltage
E open
Emitter-Base-voltage
C open
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (DC)
Peak Coll. current – Kollektor-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Peak Emitter current – Emitter-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
- VCE0
- VCES
- VCB0
- VEB0
Ptot
- IC
- ICM
- IBM
IEM
Tj
TS
Grenzwerte (TA = 25/C)
BC 807W
BC 808W
45 V
25 V
50 V
30 V
50 V
30 V
5V
225 mW 1)
500 mA
1000 mA
200 mA
1000 mA
150/C
- 65…+ 150/C
Characteristics, Tj = 25/C
DC current gain – Kollektor-Basis-Stromverhältnis
- VCE = 1 V, - IC = 100 mA
- VCE = 1 V, - IC = 500 mA
- VCE = 1 V, - IC = 100 mA
BC807W
BC808W
Group -16W
Group -25W
Group -40W
hFE
hFE
hFE
hFE
hFE
Min.
Kennwerte, Tj = 25/C
Typ. Max.
100 – 600
40 –
100 160 250
160 250 400
250 400 600
1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
4
01.11.2003
Diotec Semiconductor
Diotec Semiconductor



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