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BC808-25W Datasheet

PNP Silicon AF Transistor

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BC808-25W pdf
DC current gain hFE = ƒ(IC)
VCE = 1 V
hFE-grp. 16
10 3
BC807.../BC808...
DC current gain hFE = ƒ(IC)
VCE = 1 V
hFE-grp. 25
10 3
10 2
105 °C
85 °C
65 °C
25 °C
-40 °C
10 2
105 °C
85 °C
65 °C
25 °C
-40 °C
10
1
10
-5
10 -4
10 -3
10 -2
DC current gain hFE = ƒ(IC)
VCE = 1 V
hFE-grp. 40
10 3
10 -1 A 10 0
IC
10
1
10
-5
10 -4
10 -3
10 -2
10 -1 A 10 0
IC
Collector-emitter saturation voltage
IC = ƒ(VCEsat), hFE = 10
10 3
Ι C mA
10 2
5
150 ˚C
25 ˚C
-50 ˚C
EHP00215
10 2 105 °C
85 °C
65 °C
25 °C
-40 °C
10 1
5
10 0
5
10
1
10
-5
10 -4
10 -3
10 -2
10 -1 A 10 0
IC
10 -1
0
0.2 0.4 0.6 V 0.8
V CEsat
5 2007-06-08
Infineon
Infineon



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