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BC808-25W Datasheet

PNP Silicon AF Transistor

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BC808-25W pdf
BC807.../BC808...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 , BC807...
IC = 10 mA, IB = 0 , BC808...
V(BR)CEO
45
25
-
-
-
-
Collector-base breakdown voltage
IC = 10 µA, IE = 0 , BC807...
IC = 10 µA, IE = 0 , BC808...
V(BR)CBO
50
30
-
-
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 5 - -
Collector-base cutoff current
VCB = 25 V, IE = 0
VCB = 25 V, IE = 0 , TA = 150 °C
I CBO
- - 0.1
- - 50
Emitter-base cutoff current
VEB = 4 V, IC = 0
DC current gain1)
IC = 100 mA, VCE = 1 V, hFE-grp. 16
IC = 100 mA, VCE = 1 V, hFE-grp. 25
IC = 100 mA, VCE = 1 V, hFE grp. 40
IC = 500 mA, VCE = 1 V
I EBO
hFE
- - 100
100 160 250
160 250 400
250 350 630
40 -
-
Collector-emitter saturation voltage1)
IC = 500 mA, IB = 50 mA
Base emitter saturation voltage1)
IC = 500 mA, IB = 50 mA
VCEsat - - 0.7
VBEsat - - 1.2
1Pulse test: t < 300µs; D < 2%
Unit
V
µA
nA
-
V
3 2007-06-08
Infineon
Infineon



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