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BC808-25 Datasheet

SILICON PLANAR EPITAXIAL TRANSISTORS

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BC808-25 pdf
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BC807
BC808
SILICON PLANAR EPITAXIAL TRANSISTORS
P–N–P transistor
Marking
BC807 = 5D
BC807–16 = 5A
BC807–25 = 5B
BC807-40 = 5C
BC808 = 5H
BC808–16 = 5E
BC808–25 = 5F
BC808–40 = 5G
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–emitter voltage (VBE = 0)
Collector–emitter voltage (open base)
Collector current (peak value)
Total power dissipation up to Tamb = 25 °C
Junction temperature
Transition frequency at f = 100 MHz
–IC = 10 mA; –VCE = 5 V
–VCES
–VCE0
–ICM
Ptot
Tj
BC807
max. 50
max. 45
max.
max.
max.
1000
250
150
BC808
30 V
25 V
mA
mW
°C
fT >
80 MHz
Continental Device India Limited
Data Sheet
Page 1 of 4
CDIL
CDIL



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