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BC808-16W Datasheet

PNP Silicon AF Transistor (For general AF applications High collector current High current gain)

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BC808-16W pdf
PNP Silicon AF Transistor
• For general AF applications
• High collector current
• High current gain
• Low collector-emitter saturation voltage
• Complementary types: BC817W, BC818W (NPN)
BC 807-16W
Type
BC 807-16W
BC 807-25W
BC 807-40W
BC 808-16W
BC 808-25W
BC 808-40W
Marking Ordering Code
5As Q62702-C2325
5Bs Q62702-C2326
5Cs Q62702-C2327
5Es Q62702-C2328
5Fs Q62702-C2329
5Gs Q62702-C2330
Pin Configuration
1=B
2=E
1=B
2=E
1=B
2=E
1=B
2=E
1=B
2=E
1=B
2=E
3=C
3=C
3=C
3=C
3=C
3=C
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
BC 807 W
VCEO
BC 808 W
Collector-base voltage
BC 807 W
VCBO
BC 808 W
Emitter-base voltage
DC collector current
Peak collector current
Base current
Total power dissipation, TS = 130°C
Junction temperature
Storage temperature
VEBO
IC
ICM
IB
Ptot
Tj
Tstg
Thermal Resistance
Junction ambient 1)
RthJA
Junction - soldering point
RthJS
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
Values
45
25
50
30
5
500
1
100
250
150
- 65 ... + 150
215
80
Semiconductor Group
1
Package
SOT-323
SOT-323
SOT-323
SOT-323
SOT-323
SOT-323
Unit
V
mA
A
mA
mW
°C
K/W
Dec-19-1996
Siemens Semiconductor Group
Siemens Semiconductor Group



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