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BC807 Datasheet

PNP Silicon Epitaxial Planar Transistors

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BC807 / BC808
PNP Silicon Epitaxial Planar Transistors
for switching, AF driver and amplifier applications
These transistors are subdivided into three groups
-16, -25 and -40, according to their current gain.
As complementary types the NPN transistors BC817
and BC818 are recommended.
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage Temperature Range
BC807
BC808
BC807
BC808
Symbol
-VCBO
-VCEO
-VEBO
-IC
Ptot
RθJA
TJ
TS
Value
50
30
45
25
5
500
200
500
150
- 55 to + 150
Unit
V
V
V
mA
mW
K/W
OC
OC
Electrical Characteristics at Ta = 25 OC
Parameter
Symbol Min. Typ. Max. Unit
DC Current Gain
at -VCE = 1 V, -IC = 100 mA
Current Gain Group -16
hFE
100
-
250
-
-25 hFE
160
-
400
-
-40 hFE
250
-
600
-
at -VCE = 1 V, -IC = 500 mA
hFE 40
-
-
-
Collector Base Cutoff Current
at -VCB = 20 V
Emitter-Base Cutoff Current
at -VEB = 5 V
Collector Saturation Voltage
at -IC = 500 mA, -IB = 50 mA
Base-Emitter Voltage
at -IC = 500 mA, -VCE = 1 V
Gain -Bandwidth Product
at -VCE = 5 V, -IC = 10 mA, f = 50 MHz
Collector-Base Capacitance
at -VCB = 10 V, f = 1 MHz
-ICBO
-IEBO
-VCEsat
-VBE(on)
fT
CCBO
-
-
-
-
80
-
- 100 nA
- 100 nA
- 0.7 V
- 1.2 V
- - MHz
9 - pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 19/12/2006
SEMTECH
SEMTECH



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