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BC807 Datasheet

Surface mount Si-Epitaxial PlanarTransistors

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BC807 pdf
BC807 / BC808
BC807 / BC808
PNP
Surface Mount General Purpose Si-Epi-Planar Transistors
Si-Epi-Planar Universaltransistoren für die Oberflächenmontage
Version 2015-05-12
2.9 ±0.1
0.4+0.1
-0.05
3
Type
Code
1.1+0.1
-0.2
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
12
1.9±0.1
Dimensions - Maße [mm]
1=B 2=E 3=C
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
PNP
310 mW
SOT-23
(TO-236)
0.01 g
Maximum ratings (TA = 25°C)
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
Emitter-Base-voltage – Emitter-Basis-Spannung
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Peak Collector current – Kollektor-Spitzenstrom
Peak Emitter current – Emitter-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
E-B short
B open
C open
- VCES
- VCEO
- VEBO
Ptot
- IC
- ICM
IEM
- IBM
Tj
TS
Grenzwerte (TA = 25°C)
BC807
BC808
50 V
30 V
45 V
25 V
5V
310 mW 1)
800 mA
1A
1A
200 mA
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
DC current gain – Kollektor-Basis-Stromverhältnis 2)
- VCE = 1 V, - IC = 100 mA
Group -16
Group -25
Group -40
hFE
hFE
hFE
- VCE = 1 V, - IC = 500 mA
all groups
hFE
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2)
- IC = 500 mA, - IB = 50 mA
- VCEsat
Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 2)
- IC = 500 mA, - IB = 50 mA
- VBEsat
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
100 – 250
160 – 400
250 – 630
40 –
– – 0.7 V
– – 1.3 V
1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
Diotec Semiconductor
Diotec Semiconductor



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