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BC807 Datasheet

PNP Epitaxial Silicon Transistor

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BC807 pdf
November 2014
BC807 / BC808
PNP Epitaxial Silicon Transistor
Features
• Switching and Amplifier Applications
• Suitable for AF-Driver Stages and Low Power Output Stages
• Complement to BC817 / BC818
3
2
1 SOT-23
1. Base 2. Emitter 3. Collector
Ordering Information
Part Number
BC80716MTF
BC80725MTF
BC80740MTF
BC80840MTF
Marking
9FA
9FB
9FC
9GC
Package
SOT-23 3L
SOT-23 3L
SOT-23 3L
SOT-23 3L
Packing Method
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCES Collector-Emitter Voltage
BC807
-50
V
BC808
-30
VCEO Collector-Emitter Voltage
BC807
-45
V
BC808
-25
VEBO
IC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
Junction Temperature
Storage Temperature
-5
-800
150
-65 to +150
V
mA
°C
°C
© 2002 Fairchild Semiconductor Corporation
BC807 / BC808 Rev. 1.1.0
1
www.fairchildsemi.com
Fairchild Semiconductor
Fairchild Semiconductor



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