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BC807-25 Datasheet

PNP Plastic-Encasulate Transistor

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BC807-25 pdf
BC807-16/-25/-40
Taiwan Semiconductor
Small Signal Product
0.3 Watts, PNP Plastic-Encasulate Transistor
FEATURES
- Ideally suited for automatic insertion
- Epitaxial planar die construction
- For switching, AF driver and amplifer applications
- Complementary NPN type available (BC817)
MECHANICAL DATA
- Case: SOT- 23, Molded plastic
- Terminal: Solderable per MIL-STD-202, method 208
- Case material: Molded plastic, UL flammability
classification rating 94V-0
- Moisture sensitivity: Level 1 per J-STD-020C
- Lead free plating
- Weight: 0.008grams (approximately)
SOT-23
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
Collector Current - Continuous
Junction Temperature
Storage Temperature Range
PD
IC
TJ
TSTG
0.3
-0.5
150
-55 to + 150
UNIT
W
A
°C
°C
PARAMETER
SYMBOL
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
807-16
IC = -10 µA IE = 0
IC = -10 mA IB = 0
IE = -1 µA IC = 0
VCB = -45 V IE = 0
VCB = -40 V IB = 0
VEB = -4 V IC = 0
at IC = -500mA
IB = 50 mA
at IC = -500 mA IB = 50 mA
VCE = -5 V IC = -10 mA f = 50MHz
VCBO
VCEO
VEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
fT
DC Current Gain
807-25
807-40
VCE = -1 V IC = -100 mA hFE(1)
VALUE
-50
-45
-5
-0.1
-0.2
-0.1
-0.7
-1.2
80
100 250
160 400
250 600
UNIT
V
V
V
µA
µA
µA
V
V
MHz
Document Number: DS_S1404007
Version: F14
Taiwan Semiconductor
Taiwan Semiconductor



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