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BC807-16W Datasheet

PNP Silicon AF Transistor

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BC807-16W pdf
BC807.../BC808...
Base-emitter saturation voltage
IC = ƒ(VBEsat), hFE = 10
Collector cutoff current ICBO = ƒ(TA)
VCBO = 25 V
10 3
Ι C mA
10 2
5
10 1
5
150 ˚C
25 ˚C
-50 ˚C
EHP00214
10 5
nA
Ι CBO
10 4
10 3
10 2
EHP00213
max
typ
10 0
5 101
10 -1
0
1.0 2.0 3.0 V 4.0
V BEsat
Transition frequency fT = ƒ(IC)
VCE = parameter in V, f = 2 GHz
10 0
0
50 100 ˚C 150
TA
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
10 3
MHz
fT 5
EHP00210
65
pF
55
50
45
40
35
10 2
30
25
5
20 CEB
15
10 1
10 0 10 1 10 2 mA 10 3
ΙC
10
CCB
5
0
0 2 4 6 8 10 12 14 16 V 20
VCB/VEB
6 2007-06-08
Infineon
Infineon



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