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BC807-16 Datasheet

Plastic-Encapsulate Transistors

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BC807-16 pdf
Plastic-Encapsulate Transistors
FEATURES
Ldeally suited for automatic insertion
epitaxial planar die construction
complementary NPN type available(BC817)
BC807-16 (PNP)
BC807-25 (PNP)
BC807-40 (PNP)
Marking
BC807-16 BC807-25 BC807-40
5A 5B 5C
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
VCBO
-50
VCEO
VEBO
-45
-5
IC -500
PC 300
TJ 150
Tstg -55 to +150
Unit
V
V
V
mA
mW
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
807-16
807-25
807-40
Collector-emitter saturation voltage
VCBO
VCEO
VEBO
ICBO
ICEO
IEBO
IC= -10μA, IE=0
IC= -10mA, IB=0
IE= -1μA, IC=0
VCB= -45V, IE=0
VCE= -40V, IB=0
VEB= -4 V, IC=0
hFE(1) VCE= -1V, IC= -100mA
VCE(sat) IC=-500mA, IB= -50mA
Base-emitter saturation voltage
Transition frequency
VBE(sat)
fT
IC= -500mA, IB= -50mA
VCE= -5V, IC= -10mA
f=100MHz
Min
-50
-45
-5
100
160
250
100
Max
-0.1
-0.2
-0.1
250
400
600
-0.7
-1.2
Unit
V
V
V
uA
uA
uA
V
V
MHz
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
Page:P2-P1
HOTTECH
HOTTECH



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