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BC807-16 Datasheet

EPITAXIAL PLANAR PNP TRANSISTOR

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BC807-16 pdf
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Complementary to BC817.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
VCBO
VCEO
-50
-45
Emitter-Base Voltage
VEBO
-5
Collector Current
IC -800
Emitter Current
IE 800
Collector Power Dissipation
PC* 350
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
* : Package Mounted On 99.9% Alumina 10 8 0.6mm.
UNIT
V
V
V
mA
mA
mW
BC807
EPITAXIAL PLANAR PNP TRANSISTOR
E
L BL
DIM MILLIMETERS
A 2.93+_ 0.20
B 1.30+0.20/-0.15
23
C 1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10
Q
PP
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
P7
Q 0.1 MAX
M
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain (Note)
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE
fT
VCB=-20V, IE=0
VEB=-5V, IC=0
VCE=-1V, IC=-100mA
VCE=-1V, IC=-500mA
IC=-500mA, IB=-50mA
VCE=-1V, IC=-500mA
VCE=-5V, IC=-10mA, f=100MHz
Collector Output Capacitance
Cob VCB=-10V, IE=0, f=1MHz
Note : hFE Classification 16:100 250 , 25:160 400 , 40:250 630
MARK SPEC
TYPE.
MARK
BC807-16
5A
BC807-25
5B
BC807-40
5C
Marking
Type Name
MIN.
-
-
100
40
-
-
80
-
TYP.
-
-
-
-
-
-
-
9
MAX.
-0.1
-0.1
630
-
-0.7
-1.2
-
-
UNIT
A
A
V
V
MHz
pF
Lot No.
2009. 2. 19
Revision No : 5
1/2
KEC
KEC



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