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BC639-16 Datasheet

High Current Transistors

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BC639-16 pdf
BC637, BC639, BC639-16
High Current Transistors
NPN Silicon
Features
These are PbFree Devices*
MAXIMUM RATINGS
Rating
Collector - Emitter Voltage
Symbol
BC637
BC639
VCEO
Value
60
80
Unit
Vdc
Collector - Base Voltage
BC637
BC639
VCBO
60
80
Vdc
Emitter - Base Voltage
Collector Current Continuous
Total Device Dissipation
Derate above 25°C
@
TA
=
25°C
VEBO
IC
PD
5.0 Vdc
1.0 Adc
625 mW
5.0 mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD 800 mW
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg 55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoAmbient RqJA
200 °C/W
Thermal Resistance, JunctiontoCase
RqJC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
2
3
BASE
1
EMITTER
TO92
CASE 29
STYLE 14
123
STRAIGHT LEAD
BULK PACK
12 3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAMS
BC
63x
AYWW G
G
BC63
916
AYWW G
G
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2011
February, 2011 Rev. 1
1
x = 7 or 9
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
BC637/D
ON Semiconductor
ON Semiconductor



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