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BC636-16 Datasheet

High Current Transistors

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BC636-16 datasheet pdf
BC636, BC636-16, BC638,
BC640, BC640-16
High Current Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
BC636
BC638
BC640
Collector-Base Voltage
BC636
BC638
BC640
Emitter-Base Voltage
Collector Current — Continuous
www.DataSheet4U.com
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction to Ambient
Thermal Resistance,
Junction to Case
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
Symbol
RθJA
RθJC
Value
–45
–60
–80
–45
–60
–80
–5.0
–0.5
Unit
Vdc
Vdc
Vdc
Adc
625 mW
5.0 mW/°C
1.5
12
–55 to
+150
Watts
mW/°C
°C
Max Unit
200 °C/W
83.3 °C/W
http://onsemi.com
COLLECTOR
2
3
BASE
1
EMITTER
1
23
CASE 29
TO–92
STYLE 14
ORDERING INFORMATION
Device
Package
Shipping
BC636
TO–92
5000 Units/Box
BC636ZL1
TO–92 2000/Ammo Pack
BC636–16ZL1
TO–92 2000/Ammo Pack
BC638
TO–92
5000 Units/Box
BC638ZL1
TO–92 2000/Ammo Pack
BC640
TO–92
5000 Units/Box
BC640ZL1
TO–92 2000/Ammo Pack
BC640–16
TO–92
5000 Units/Box
© Semiconductor Components Industries, LLC, 2001
June, 2000 – Rev. 1
1
Publication Order Number:
BC636/D
ON Semiconductor
ON Semiconductor



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