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BC556 Datasheet

PNP Epitaxial Silicon Transistor

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BC556 datasheet pdf
Switching and Amplifier
• High Voltage: BC556, VCEO= -65V
• Low Noise: BC559, BC560
• Complement to BC546 ... BC 550
BC556/557/558/559/560
PNP Epitaxial Silicon Transistor
TO-92
1. COLLECTOR
2. BASE
3. EMITTER
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
: BC556
: BC557/560
: BC558/559
VCEO
Collector-Emitter Voltage
: BC556
: BC557/560
: BC558/559
VEBO
IC
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-80
-50
-30
-65
-45
-30
-5
-100
500
150
-65 ~ 150
Units
V
V
V
V
V
V
V
mA
mW
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
ICBO
hFE
VCE
(sat)
VBE (sat)
VBE (on)
fT
Cob
NF
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Base Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
: BC556/557/558
: BC559/560
: BC559
: BC560
VCB= -30V, IE=0
VCE= -5V, IC=2mA
IC= -10mA, IB= -0.5mA
IC= -100mA, IB= -5mA
IC= -10mA, IB= -0.5mA
IC= -100mA, IB= -5mA
VCE= -5V, IC= -2mA
VCE= -5V, IC= -10mA
VCE= -5V, IC= -10mA, f=10MHz
VCB= -10V, IE=0, f=1MHz
VCE= -5V, IC= -200µA
f=1KHz, RG=2K
VCE= -5V, IC= -200µA
RG=2KΩ, f=30~15000MHz
Min.
110
-600
Typ.
-90
-250
-700
-900
-660
150
2
1
1.2
1.2
Max.
-15
800
-300
-650
-750
-800
6
10
4
4
2
Units
nA
mV
mV
mV
mV
mV
mV
MHz
pF
dB
dB
dB
dB
hFE Classification
Classification
hFE
A
110 ~ 220
B
200 ~ 450
C
420 ~ 800
http://www.luguang.cn
Email:lge@luguang.cn
LGE
LGE



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