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BC337 Datasheet

SILICON NPN TRANSISTORS

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BC337 SERIES
SILICON
NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BC337 series
devices are silicon NPN transistors designed for general
purpose amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
ΘJA
ΘJC
50
45
5.0
800
625
-65 to +150
200
83.3
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN TYP
ICES
VCE=45V
ICBO
VCB=30V
IEBO
VEB=4.0V
BVCES
IC=100μA
50
BVCEO
IC=10mA
45
BVEBO
IE=10μA
5.0
VCE(SAT) IC=500mA, IB=50mA
VBE(ON)
VCE=1.0V, IC=300mA
hFE
VCE=1.0V, IC=100mA (BC337)
100
hFE
VCE=1.0V, IC=100mA (BC337-16)
100
hFE
VCE=1.0V, IC=100mA (BC337-25)
160
hFE
VCE=1.0V, IC=100mA (BC337-40)
250
hFE VCE=1.0V, IC=300mA
60
fT VCE=5.0V, IC=10mA, f=100MHz
210
Cob VCB=10V, IE=0, f=1.0MHz
15
MAX
100
100
100
0.7
1.2
630
250
400
630
UNITS
V
V
V
mA
mW
°C
°C/W
°C/W
UNITS
nA
nA
nA
V
V
V
V
V
MHz
pF
R2 (6-August 2014)
Central Semiconductor
Central Semiconductor



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