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B1155 Datasheet

2SB1155

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Power Transistors
2SB1155
Silicon PNP epitaxial planar type
For power switching
Complementary to 2SD1706
s Features
q Low collector to emitter saturation voltage VCE(sat)
q Satisfactory linearity of foward current transfer ratio hFE
q Large collector current IC
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–130
–80
–7
–25
–15
80
3
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
IEBO
VCEO
hFE1
hFE2*
hFE3
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
ton
tstg
tf
VCB = –100V, IE = 0
VEB = –5V, IC = 0
IC = –10mA, IB = 0
VCE = –2V, IC = – 0.1A
VCE = –2V, IC = –3A
VCE = –2V, IC = –8A
IC = –7A, IB = – 0.35A
IC = –15A, IB = –1.5A
IC = –7A, IB = – 0.35A
IC = –15A, IB = –1.5A
VCE = –10V, IC = – 0.5A, f = 10MHz
IC = –7A, IB1 = – 0.7A, IB2 = 0.7A,
VCC = –50V
Unit: mm
15.0±0.3
11.0±0.2
φ3.2±0.1
5.0±0.2
3.2
2.0±0.2
1.1±0.1
5.45±0.3
10.9±0.5
123
2.0±0.1
0.6±0.2
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(a)
min typ max Unit
–10 µA
–50 µA
–80 V
45
90 260
30
– 0.5
V
–1.5 V
–1.5 V
–2.5 V
25 MHz
0.5 µs
1.3 µs
0.2 µs
*hFE2 Rank classification
Rank
Q
P
hFE2 90 to 180 130 to 260
1
Panasonic
Panasonic



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