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B1116A Datasheet

PNP Transistor

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SB1116/1116A TRANSISTOR (PNP)
TO-92
FEATURES
· High Collector Power Dissipation .
· Complementary to 2SD1616/2SD1616A
1. EMITTER
2. COLLECTOR
MAXIMUM RATINGS (Ta=25unless otherwise noted)
3. BASE
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage 2SB1116
2SB1116A
-60
-80
V
VCEO
Collector-Emitter Voltage 2SB1116
2SB1116A
-50
-60
V
VEBO
Emitter-Base Voltage
-6 V
IC Collector Current -Continuous
-1 A
PC Collector Power Dissipation
0.75 W
Tj Junction Temperature
150
Tstg Storage Temperature
-55-150
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=-100μA,IE=0
2SB1116
2SB1116A
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base -emitter saturation voltage
Base -emitter voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
CLASSIFICATION OF hFE(1)
Rank
L
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
VBE
fT
Cob
ton
ts
tf
IC=-1mA,IB=0
2SB1116
2SB1116A
IE=-100μA,IC=0
VCB=-60V,IE=0
2SB1116
VCB=-80V,IE=0
2SB1116A
VEB=-6V,IC=0
VCE=-2V,IC=-0.1A
VCE=-2V,IC=-1A
IC=-1A,IB=-50mA
IC=-1A,IB=-50mA
VCE=-2V,IC=-0.05A
VCE=-2V,IC=-0.1A
VCB=-10V,IE=0,f=1MHz
VCC=-10V,IC=-0.1A,IB1=-IB2=-0.01A,
VBE(Off)=2to3V
K
Min
-60
-80
-50
-60
-6
135
81
-0.6
70
Range
135-270
200-400
Typ Max
-0.1
-0.1
600
-0.3
-1.2
-0.7
25
0.07
0.7
0.07
U
300-600
Unit
V
V
V
μA
μA
V
V
V
MHz
pF
us
us
us
A,May,2011
JCST
JCST



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