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2SB1116

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DATA SHEET
SILICON TRANSISTORS
2SB1116, 1116A
PNP SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
FEATURES
• Low VCE(sat)
VCE(sat) = 0.20 V TYP. (IC = 1.0 A, IB = 50 mA)
• High PT in small dimension with general-purpose
PT = 0.75 W, VCEO = 50/60 V, IC(DC) = 1.0 A
• Complementary transistor with 2SD1616 and 1616A
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)*
PT
Tj
Tstg
Ratings
2SB1116 2SB1116A
60 80
50 60
6.0
1.0
2.0
0.75
150
55 to +150
* PW 10 ms, duty cycle 50%
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Unit
V
V
V
A
A
W
°C
°C
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
DC base voltage
Collector saturation voltage
Base saturation voltage
Output capacitance
Gain bandwidth product
Turn-on time
Storage temperature
Fall time
ICBO
IEBO
hFE1 **
hFE2 **
VBE **
VCE(sat) **
VBE(sat) **
Cob
fT
ton
tstg
tf
VCB = 60 V, IE = 0
VEB = 6.0 V, IC = 0
VCE = 2.0 V, IC = 100 mA
VCE = 2.0 V, IC = 1.0 A
VCE = 2.0 V, IC = 50 mA
IC = 1.0 A, IB = 50 mA
IC = 1.0 A, IB = 50 mA
VCB = 10 V, IE = 0, f = 1.0 MHz
VCE = 2.0 V, IC = 100 mA
VCC = 10 V, IC = 100 mA
IB1 = IB2 = 10 mA,
VBE(off) = 2 to 3 V
** Pulse test PW 350 µs, duty cycle 2%
PACKAGE DRAWING (UNIT: mm)
2SB1116, 1116A
MIN.
135
81
600
70
TYP.
MAX.
100
100
600/400
650
0.20
0.9
25
120
0.07
0.70
0.07
700
0.3
1.2
Unit
nA
nA
mV
V
V
pF
MHz
µs
µs
µs
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16195EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
21090928
NEC
NEC



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