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B1018A Datasheet

2SB1018A

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2SB1018A
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TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)
2SB1018A
High Current Switching Applications
Power Amplifier Applications
Unit: mm
High collector current: IC = 7 A
Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 4 A)
Complementary to 2SD1411A
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
100
V
Collector-emitter voltage
VCEO 80 V
Emitter-base voltage
VEBO 5 V
Collector current
IC 7 A
Base current
IB 1 A
Collector power
dissipation
Ta = 25°C
Tc = 25°C
PC
2.0
W
30
Junction temperature
Tj 150 °C
Storage temperature range
Tstg
55 to 150
°C
JEDEC
JEITA
TOSHIBA
2-10R1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 1.7 g (typ.)
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-21
Toshiba
Toshiba



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