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B1016A Datasheet

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TOSHIBA Transistor Silicon PNP Epitaxial Type
2SB1016A
Power Amplifier Applications
2SB1016A
Unit: mm
High breakdown voltage: VCEO = 100 V
Low collector-emitter saturation voltage: VCE (sat) = 2.0 V (max)
Complementary to 2SD1407A
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
100
V
Collector-emitter voltage
VCEO
100
V
Emitter-base voltage
VEBO 5 V
Collector current
IC 5 A
Base current
IB
0.5
A
Collector power dissipation
(Tc = 25°C)
PC 30 W
JEDEC
Junction temperature
Storage temperature range
Tj 150 °C
Tstg
55 to 150
°C
JEITA
TOSHIBA
2-10R1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 1.7 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-21
Toshiba
Toshiba



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