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B1015 Datasheet

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TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SB1015A
2SB1015A
Audio Frequency Power Amplifier Applications
· Low collector saturation voltage: VCE (sat) = −1.7 V (max)
(IC = 3 A, IB = 0.3 A)
· Collector power dissipation: PC = 25 W (Tc = 25°C)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
-60
-60
-7
-3
-0.5
2.0
25
150
-55~150
Unit
V
V
V
A
A
W
°C
°C
Unit: mm
JEDEC
JEITA
SC-67
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
1 2003-02-04
Toshiba Semiconductor
Toshiba Semiconductor



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