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2SB1011

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Power Transistors
2SB1011
Silicon PNP triple diffusion planar type
For low-frequency output amplification
Features
High collector-base voltage (Emitter open) VCBO
High collector-emitter voltage (Base open) VCEO
Large collector power dissipation PC
Low collector-emitter saturation voltage VCE(sat)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
400
400
5
100
200
1.2
150
55 to +150
Unit
V
V
V
mA
mA
W
°C
°C
φ 3.16±0.1
8.0+–00..15
Unit: mm
3.2±0.2
0.75±0.1
0.5±0.1
4.6±0.2
2.3±0.2
0.5±0.1
1.76±0.1
1: Emitter
123
2: Collector
3: Base
TO-126B-A1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emiter open) VCBO IC = −100 µA, IE = 0
400
V
Collector-emitter voltage (Base open) VCEO IC = −500 µA, IB = 0
400
V
Emiter-base voltage (Collector open) VEBO IE = −100 µA, IC = 0
5
V
Forward current transfer ratio
hFE VCE = −5 V, IC = −30 mA
30
Collector-emitter saturation voltage
VCE(sat) IC = −50 mA, IB = −5 mA
2.5 V
Base-emitter saturation voltage
VBE(sat) IC = −50 mA, IB = −5 mA
1.5 V
Transition frequency
fT VCB = −30 V, IE = 20 mA, f = 200 MHz
70
MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = −30 V, IE = 0, f = 1 MHz
9 pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2003
SJD00036BED
1
Panasonic Semiconductor
Panasonic Semiconductor



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