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B0967 Datasheet

2SB0967

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B0967 pdf
Power Transistors
2SB967
Silicon PNP epitaxial planar type
For low-frequency power amplification
6.5±0.1
5.3±0.1
4.35±0.1
Unit: mm
2.3±0.1
0.5±0.1
s Features
q Possible to solder the radiation fin directly to printed cicuit board
q Low collector to emitter saturation voltage VCE(sat)
q Large collector current IC
0.93±0.1
1.0±0.1
0.1±0.05
0.5±0.1
2.3±0.1
4.6±0.1
0.75±0.1
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
www.DCaotlaleSchtoeretto4Uba.sceovmoltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation (TC=25°C)
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–27
–18
–7
–8
–5
20
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
123
6.5±0.2
5.35
4.35
1:Base
2:Collector
3:Emitter
U Type Package
Unit: mm
2.3 2.3
0.75
0.6
123
0.5±0.1
1:Base
2:Collector
3:Emitter
EIAJ:SC–63
U Type Package (Z)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
IEBO
VCEO
VEBO
hFE*
VCE(sat)
fT
Cob
VCB = –10V, IE = 0
VEB = –5V, IC = 0
IC = –1mA, IB = 0
IE = –10µA, IC = 0
VCE = –2V, IC = –2A
IC = –3A, IB = – 0.1A
VCB = –6V, IE = 50mA, f = 200MHz
VCB = –20V, IE = 0, f = 1MHz
–18
–7
90
–100 nA
–1 µA
V
V
625
–1 V
120 MHz
85 pF
*hFE Rank classification
Rank
P
hFE 90 to 135
Q
125 to 205
R
180 to 625
1
Panasonic
Panasonic



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