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B0530W Datasheet

Low VF SMD Schottky Barrier Diode

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B0530W pdf
Small Signal Product
B0520LW,B0530W,B0540W
Taiwan Semiconductor
Low VF SMD Schottky Barrier Diode
FEATURES
- Low power loss, high current capability, low VF
- Surface mount device type
- Moisture sensitivity level 1
- Matte Tin (Sn) lead finish with Nickel (Ni) underplate
- Packing code with suffix "G" means
green compound (halogen-free)
MECHANICAL DATA
- Case: Bend lead SOD-123 small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed : 260°C/10s
- Polarity: Indicated by cathode band
- Weight: 0.01 g (approximately)
SOD-123
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
PARAMETER
SYMBOL B0520LW B0530W
Power Dissipation
Repetitive Peak Reverse Voltage
Reverse Voltage
Mean Forward Current @ TL=100oC (Lead Temperature)
Non-Repetitive Peak Forward Surge Current (Note 1)
Thermal Resistance (Junction to Ambient) (Note 2)
PD
VRRM
VR
IO
IFSM
RθJA
20
14
410
30
21
500
5.5
244
Junction and Storage Temperature Range
TJ , TSTG
-55 to +125
Notes: 1. Test Condition: 8.3ms single half sine-wave superimposed on rated load
Notes: 2. Valid provided that electrodes are kept at ambient temperature
B0540W
40
28
UNIT
mW
V
V
mA
A
oC/W
oC
PARAMETER
Reverse Breakdown Voltage
(Minimum Value)
IR=250μA
IR=130μA
IR=20μA
Forward Voltage
(Maximum Value)
IF=100mA
IF=500mA
IF=1000mA
VR = 10V
Reverse Leakage Current
(Maximum Value)
VR = 15V
VR = 20V
VR = 30V
VR = 40V
Junction Capacitance
VR = 0 V
TJ = 25oC
TJ = 25oC
f=1.0MHz
SYMBOL
V(BR)
VF
IR
CJ
B0520LW
20
-
-
0.300
0.385
-
75
-
250
-
-
B0530W
-
30
-
0.375
0.430
-
-
20
-
130
-
170
B0540W
-
-
40
-
0.510
0.620
-
-
10
-
20
UNIT
V
V
μA
pF
Document Number: DS_S1412004
Version: H14
Taiwan Semiconductor
Taiwan Semiconductor



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